An Efficient W-/D-Band Power Amplifier in a 130 nm SiGe BiCMOS Process

Abstract

This paper presents a wideband power amplifier (PA) designed and implemented in Infineon Technologies' 130-nm SiGe BiCMOS process for upper W-band and lower D-band applications. A complete load-pull simulation methodology is carried out, and a band pass filter (BPF)-based matching strategy is employed for the design of the output and inter-stage matching networks. The fabricated PA prototype achieves a small-signal gain 3-dB bandwidth of 71-133 GHz. Moreover, it maintains a relatively flat gain of approximately 15.7 dB over 75-128 GHz, with less than 1-dB fluctuation. The measured saturated output power is 8.8-11.7 dBm, while the measured peak power-added efficiency (PAE) is 7.2-11.1%. These results demonstrate the potential of SiGe BiCMOS technology for wideband and integrated transmitter front ends operating across the W-/D-band frequency range.